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Title of Thesis

Effects Of Annealing On Structural, Optical And Electrical Properties Of Sno2, Tio2, Ge And Multi-layer Tio2-ge Thin Films Prepared By Physical Vapor Deposition Techniques

Author(s)

Abdul Faheem Khan

Institute/University/Department Details
Department Of Chemical And Materials Engineering / Pakistan Institute of Engineering and Applied Sciences, Islamabad
Session
2010
Subject
Materials Engineering
Number of Pages
223
Keywords (Extracted from title, table of contents and abstract of thesis)
Annealing, Electrical, Structural, Optical, Films, Vapor, Techniques, Deposition, Stress, Prominent, Variation, Nanostructured

Abstract
This thesis reports the effects of annealing on structural, optical and electrical properties of nanostructured thin film materials including SnO2, TiO2, Ge and multi-layer TiO2-Ge thin films prepared by PVD techniques. These films were characterized using different techniques such as X-ray Diffraction, X-ray reflectivity, Rutherford backscattering, Scanning Electron Microscopy, atomic force microscopy, Raman spectroscopy, transmission spectroscopy, impedance spectroscopy and dc-resistivity measurements, etc.
Annealing was responsible for pronounced changes in electrical, optical and optoelectronic properties of SnO2, TiO2 and Ge films, as associated with changes in their structures, stoichiometry and stress-state. These aspects have been focused upon in 3rd-5th chapters of this thesis. This most prominent feature of this work was the development of nanostructured multi-layer TiO2-Ge thin films that showed variation in the band gap energy and optoelectronic properties depending on the thickness of the Ge layers and annealing temperatures. This part of the work has been focused upon in 7th and 8th chapters of this thesis, with a summary of the results given in 8th chapter.

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5,590 KB
S. No. Chapter Title of the Chapters Page Size (KB)
1 0 CONTENTS

 

x
13 KB
2

1

INTRODUCTION

1.1 Physical vapor deposition
1.2 Optoelectronic materials
1.3 Tin oxide
1.4 Titanium dioxide
1.5 Germanium
1.6 Annealing
1.7 Primary focus and outline of the thesis

1
236 KB
3 2 EXPERIMENTAL TECHNIQUES

2.1 Substrate preparation
2.2 Film deposition
2.3 Film characterization techniques

34
265 KB
4 3 ELECTRON BEAM EVAPORATED NANOCRYSTALLINE SNO2 THIN FILMS

3.1 Introduction
3.2 Experimental
3.3 Results & discussion
3.4 Conclusions

55
664 KB
5 4 RF-MAGNETRON SPUTTERED NANOSTRUCTURED SNO2 THIN FILMS

4.1 Introduction
4.2 Experimental
4.3 Results & discussion
4.4 Conclusions

76
574 KB
6 5 ELECTRON BEAM EVAPORATED NANOSTRUCTURED TIO2 THIN FILMS

5.1 Introduction
5.2 Experimental
5.3 Results & discussion
5.4 Conclusions

101
625 KB
7 6 NANOSTRUCTURED GERMANIUM THIN FILMS

6.1 Introduction
6.2 Experimental
6.3 Results & discussion
6.4 Conclusions

121
727 KB
8 7 TiO2–GE MULTI-LAYER THIN FILMS WITH UNIFORM PERIOD

7.1 Introduction
7.2 Experimental
7.3 Results & discussion
7.4 Conclusions

138
897 KB
9 8 NANOSTRUCTURED MULTI-LAYER TIO2–GE FILMS WITH QUANTUM CONFINEMENT EFFECTS FOR PHOTOVOLTAIC APPLICATIONS

8.1 Introduction
8.2 Experimental
8.3 Results & discussion
8.4 Conclusions

168
985 KB
10 9 SUMMARY

9.1 SnO2 films
9.2 TiO2 films
9.3 Ge films
9.4 Multi-layer TiO2-Ge thin films
9.5 Conclusions
9.6 Future recommendation

201
48 KB