|Keywords (Extracted from title, table of contents and
abstract of thesis)|
Copper, mixed-Metal, Oxides, Source, Precursors, Monometallic, Homobimetallic,
Heterobimetallic, ohmic conductors
monometallic, homobimetallic and heterobimetallic complexes such as
[Ni(hfacac)2(dmaeH)] (1), [Cu(dmap)(OAc)(H2O)]2⋅H2O (2),
[Cu2(OAc)3(dmap) (THF)]n (3), [Cu(dmae)(TFA)]4 (4), [Cu(deae)(TFA)]4
(5), [Cu4(OAc)6(bdmap)2 (H2O)2]⋅2H2O (6), [Cu6(bdmap)3(μ-O)2Cl6]
(7), [Zn6(OAc)8(μ-O)2(dmae)4] (8), [Co(acac)Cu2(bdmap)2Cl3]⋅C7H8
(9), [Co(acac)Cu2(bdmap)2Cl3]⋅3CH2Cl2 (10),
[Zn(TFA)3(μ-OH)Cu3(dmae)3Cl]∙THF (11), [Zn(TFA)4Cu3(dmae)4] (12),
[Zn2(OAc)6 (μ-O)Cu4(dmae)4]⋅2H2O (13),
[Zn2(OAc)6(μ-O)2Cu4(bdmap)2Cl2] (14), [Cd2(OAc)6(μ-
O)Cu4(dmae)4]⋅H2O (15), [Ba2(dmae)4Cu4(OAc)6(OH)2] (16) and
[Pb2(OAc)4(μ-O)3 Cu6(dmae)4Cl4]∙C7H8∙1.7H2O (17) were successfully
synthesized and characterized by their melting point, elemental
analysis, FT-IR, mass spectrometry, TGA and their molecular
structures were determined by single crystal X-ray analysis.
Thermogravimetric analyses prove that precursors undergo facile
thermal decomposition at relatively low temperature to give
copper/mixed-metal copper oxides. All the designed precursors except
(1), (3) and (10), were used for the fabrication of thin films of
copper/mixed-metal copper oxides by aerosol-assisted chemical vapour
deposition. The phase crystallinity of deposited thin films was
determined by XRD, while SEM and EDX were used for surface
morphology and elemental composition.
The homometallic precursors (2), (4), (5), (6) and (7) have been
found suitable for the deposition of Cu metal, while ZnO films were
fabricated from precursor (8) under ordinary conditions of
temperature and pressure, using nitrogen as carrier gas. The
heterometallic precursors (9), (10) are promising for the deposition
of Cu-CoO composite thin films, while (11), (12), (13), (14) for
fabrication of Cu-ZnO and (15) for Cu-CdO composite thin films.
Similarly, precursor (16) is suitable for CuO-Ba2Cu3O5+x and (17)
for Cu-Pb2O3 ceramic thin films.
The powder XRD and EDX analysis revealed the formation of
crystalline thin films by AACVD without any carboneous impurities
and the SEM results demonstrated that the deposited films are crack
free with particles having distinct and clear grain boundaries.
These characteristics make them suitable for their possible
technological applications. The thickness and voltage-current
measurements of the films deposited from precursors (8) and (16)
revealved their semiconducting nature, while the films fabricated
from (11), (12) and (14) are ohmic conductors.