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Title of Thesis

Study of Deep Levels Associated with Ptv Pd Centres in Si & Mtd-Gap Levels in Gap

Author(s)

Asghar Ali

Institute/University/Department Details
Department of Physics / Quaid-i-Azam University, Islamabad
Session
1994
Subject
Physics
Number of Pages
215
Keywords (Extracted from title, table of contents and abstract of thesis)
Deep Levels, Associated, Ptv Pd Centres, Si & Mtd-Gap, Levels in Gap

Abstract
Available

Download Full Thesis
15,658 KB
S. No. Chapter Title of the Chapters Page Size (KB)
1 0 CONTENTS

 

iv
262 KB
2

1

INTRODUCTION 1
1,107 KB
3 2 THEORETICAL ASPECTS 17
2,344 KB
4 3 LITERATURE SURVEY 50
795 KB
5 4 EXPERIMENTAL DETAILS 60
882 KB
6 5 MID-GAP LEVELS IN GALLIUM PHOSPHIDE 72
829 KB
7 6 DOMINANT RECOMBINATION CENTRE IN Si:Pt 86
559 KB
8 7 DEEP LEVELS IN Pd-DOPED SILICON 96
4,124 KB
9 8 AN OVERVIEW OF THE WORK 156
537 KB
10 9 REFERENCES 162
488 KB