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Title of Thesis

Study of Deep Levels in as Grown and Heavy Transition Metal (Ru, Ru)-Doped MOVPE GaAs and Effects of Irradiation and Annealing

Author(s)

Nazir Ahmad Naz

Institute/University/Department Details
Department of Physics / Quaid-i-Azam University, Islamabad
Session
2008
Subject
Physics
Number of Pages
231
Keywords (Extracted from title, table of contents and abstract of thesis)
Deep Levels, Grown, Heavy Transition Metal, (Ru, Ru)-Doped, MOVPE GaAs, Irradiation, Annealing

Abstract
Available

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16,018 KB
S. No. Chapter Title of the Chapters Page Size (KB)
1 0 CONTENTS

 

vi
501 KB
2

1

INTRODUCTION 1
1,034 KB
3 2 THEORETICAL DESCRIPTION OF CARRIER KINETICS 13
1,179 KB
4 3 DEEP LEVEL TRANSIENT SPECTROSCOPY 31
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5 4 EXPERIMENTAL DETAILS 45
632 KB
6 5 DEEP LEVELS IN MOCVD GROWN p-TYPE GaAs 54
2,804 KB
7 6 DEEP LEVELS IN MOCVD GROWN n-TYPE GaAs 93
1,860 KB
8 7 DEEP LEVELS IN RH-DOPED MOCVD GROWN GsAs 119
2,657 KB
9 8 DEEP LEVELS IN RU-DOPED MOCVD GROWN GaAs 158
2,399 KB
10 9 AN OVERVIEW OF THE WORK 158
899 KB
11 10 REFERENCES 208
679 KB