Pakistan Research Repository

Capacitance transients on point defects in e--irradiated Sb doped Ge for micro and nanoelectronic devices

Rana, Dr Mukhtar Ahmed (2008) Capacitance transients on point defects in e--irradiated Sb doped Ge for micro and nanoelectronic devices. Final Report: HEC Post Doc Fellowship Phase II. (Submitted)

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Item Type:Other
Additional Information:PARENT UNIVERSITY/ORGANIZATION: Physics Division, PINSTECH, Islamabad
Subjects:Engineering & Technology (e)
ID Code:3544
Deposited By:Mr. Javed Memon
Deposited On:01 Jul 2010 10:47
Last Modified:01 Jul 2010 10:47

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